Rothberg, Jonathan M.,Fife, Keith G.,Sanchez, Nevada J.,Alie, Susan A.
申请号：
AU2015247484
公开号：
AU2015247484A1
申请日:
2015.04.17
申请国别(地区):
AU
年份:
2016
代理人:
摘要：
Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
