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Implantable pulse generator for neurostimulation that comprises thin-oxide transistors and method of operating a neurostimulation system
专利权人:
N. Sateesh Pillai
发明人:
N. Sateesh Pillai,Daniel J. Black
申请号:
US12953986
公开号:
US08583249B2
申请日:
2010.11.24
申请国别(地区):
US
年份:
2013
代理人:
摘要:
In one embodiment, a method, of operating an IPG, comprises: generating a variable anode voltage by first circuitry to drive current during pulse generation, the first circuitry being programmable to generate the anode voltage from a plurality of voltages in response to a control signal providing the anode voltage to a first circuit node operating a transistor to control current flow between the first circuit node and an output of the IPG, wherein the transistor possesses a gate-to-source breakdown voltage generating a first supply signal that is maintained at a voltage level equal to the anode voltage plus or minus a predetermined amount and selectively applying the first supply signal and a second supply signal to a gate of the transistor to connect or disconnect the first circuit node in a circuit path with the output of the IPG.
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中国工程科技知识中心
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