Christopher R. Butson;Christopher B. Maks;Cameron C. McIntyre
发明人:
Christopher R. Butson,Christopher B. Maks,Cameron C. McIntyre
申请号：
US11715829
公开号：
US08180601B2
申请日:
2007.03.08
申请国别(地区):
US
年份:
2012
代理人:
摘要：
This document discusses, among other things, systems and methods for determining volume of activation for deep brain stimulation (“DBS”) using a finite element model (FEM) circuit to determine a FEM of an implanted electrode and a tissue medium in which the electrode is implanted, a Fourier FEM solver circuit to calculate a potential distribution in the tissue medium using information from the FEM circuit and a capacitive component of at least one of the implanted electrode and the tissue medium, and a volume of activation (VOA) circuit to predict a VOA using the potential distribution and a neuron model.
