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FORMULATIONS FOR CHEMICAL MECHANICAL POLISHING PADS AND CMP PADS MADE THEREWITH
专利权人:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人:
Barton Bryan E.,Mills Michael E.
申请号:
US201615365369
公开号:
US2018148537(A1)
申请日:
2016.11.30
申请国别(地区):
美国
年份:
2018
代理人:
摘要:
A two component composition for making chemical mechanical polishing pad for polishing a semiconductor substrate is provided comprising a liquid aromatic isocyanate component having an unreacted isocyanate (NCO) concentration of from 15 to 40 wt. %, based on the total solids weight of the aromatic isocyanate component, such as methylene di(phenylisocyanate) (MDI), a liquid polyol component of a polyol having a polyether backbone and having from 5 to 7 hydroxyl groups per molecule, and a curative of one or more polyamine or diamine, wherein the reaction mixture comprises 50 to 65 wt. % of hard segment materials, based on the total weight of the to reaction mixture. The composition when mixed cured to form a polyurethane reaction product. Also provided are CMP polishing pads made from the polyurethane reaction product by spraying the composition into a mold.
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