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Epidermal down-growth barrier
专利权人:
Marcus Andersson
发明人:
Marcus Andersson
申请号:
US13578004
公开号:
US09610433B2
申请日:
2011.02.10
申请国别(地区):
US
年份:
2017
代理人:
摘要:
A percutaneous implant for reducing the risk of post-implant infection by reducing the likelihood of epidermal down-growth between the dermis of the skin and the implant. In one example, the implant comprises a barrier member between the epidermis and the dermis about the implant. In another example, a barrier is provided by removing a portion of the epidermis from the dermis about the implant.
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