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VARIABLE DENSITY IMPLANT AND METHOD
专利权人:
Zimmer; Inc.
发明人:
Ray Zubok,Mehul Dharia,Joseph R. Vargas,Steven Seelman,Timothy A. Hoeman
申请号:
US14032705
公开号:
US20140088716A1
申请日:
2013.09.20
申请国别(地区):
US
年份:
2014
代理人:
摘要:
An implant can comprise a porous region including a plurality of interconnecting interstitial cells configured to receive bone or biological tissue ingrowth. The porous region can be formed of a first portion, including a first plurality of the interconnecting interstitial cells and having a first density, and a second portion, including a second plurality of the interconnecting interstitial cells and having a second density different than the first density. The plurality of interconnecting interstitial cells can form a framework onto which a material can be disposed in different amounts to provide the first and second densities of the first and second portions, respectively. The second density can be selected and configured to provide greater bone or biological tissue ingrowth than the first density. The first and second density can be selected and configured to substantially match an anisotropic property of a body component the implant is intended to replace or augment.
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