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硫化物半導体微粒子の製造方法
专利权人:
積水化学工業株式会社
发明人:
孫 仁徳,佐々木 拓,大村 貴宏
申请号:
JP20130067450
公开号:
JP6063320(B2)
申请日:
2013.03.27
申请国别(地区):
日本
年份:
2017
代理人:
摘要:
PROBLEM TO BE SOLVED: To provide a method for producing sulfide semiconductor fine particles, in which the sulfide semiconductor fine particle, that contains a small amount of residual organic matter on the surface thereof and has small particle size and low oxygen content, can be produced easily without using additives such as a dispersion stabilizer and to provide the sulfide semiconductor fine particles produced by using the method for producing sulfide semiconductor fine particles.SOLUTION: The method for producing sulfide semiconductor fine particles having 50 nm or smaller average particle size comprises the steps of: replacing the atmospheric gas of a liquid raw material, which contains a sulfide semiconductor raw material having 3.0 eV or lower bandgap and a solvent, with an inert gas; and irradiating the liquid raw material with laser beams.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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