An ultrasonic transducer and a method of manufacturing the same. The ultrasonic transducer includes a substrate, a supporting unit that is disposed on the substrate and comprises a through-hole, a thin-film disposed over the substrate in a region corresponding to the through-hole, wherein the thin-film is separated from the substrate and the supporting unit, and a connection unit that connects the supporting unit to the thin-film. In the method of manufacturing the ultrasonic transducer, a plurality of SOI wafers and a Si wafer are bonded without performing an aligning process.
