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מערכת לגירוי לעומק המוח באתר ספציפי עבור שיפור הזיכרון
专利权人:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人:
申请号:
IL22696913
公开号:
IL226969A
申请日:
2013.06.16
申请国别(地区):
IL
年份:
2017
代理人:
摘要:
A site-specific deep brain stimulation for enhancement of memory is described. A method of the site-specific deep brain stimulation for enhancement of memory may include implanting intracranial depth electrodes in a patient, wherein the electrodes are placed in right and/or left entorhinal regions, and stimulating the electrodes with current set below an after-discharge threshold. The method may include stimulation at a specific brain site in the medial temporal lobe, stimulation (ODTS) at specific stages of information processing. A system for site specific deep brain stimulation of entorhinal regions during specific stages of information processing is also described.
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