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Capacitive micromachined ultrasonic transducer (CMUT) device with through-substrate via (TSV)
专利权人:
发明人:
Peter B. Johnson,Ira Oaktree Wygant
申请号:
US13779376
公开号:
US09520811B2
申请日:
2013.02.27
申请国别(地区):
US
年份:
2016
代理人:
摘要:
A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region. A membrane layer is bonded on the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A through-substrate via (TSV) includes a dielectric liner which extends from a bottom side of the first substrate to a top surface of the membrane layer. A top side metal layer includes a first portion over the TSV, over the movable membrane, and coupling the TSV to the movable membrane. A patterned metal layer is on the bottom side surface of the first substrate including a first patterned layer portion contacting the bottom side of the first substrate lateral to the TSV.
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