The present invention comprises a device 100 for RF skin treatment comprising an active electrode 1 disposed on the working side 15 of the device and having a first skin contact surface for contacting the user's skin, The first skin contact surface relates to a device having a maximum cross-sectional dimension of 2 mm or less. The device has a return electrode 2 disposed on the working side 15 of the device and having a second skin contact surface for contacting the user's skin, the area of the second skin contact surface being It is at least 5 times larger than the area of the first skin contact surface. An RF generator 21 configured to supply an RF treatment voltage between the active electrode 1 and the return electrode 2 and thereby heat the skin area under the active electrode is disposed, the RF treatment voltage being 100 mHz. It has a frequency in the range of 3 GHz. By using a frequency of RF treatment voltage within that range, the depth of the thermal damage formed under the active electrode as a result of applying the RF treatment voltage used an equivalent RF treatment voltage at a much lower frequency. Compared to the RF skin treatment device, it is considerably increased.本発明は、ＲＦ皮膚処置のための装置１００であって、該装置の動作側１５に配置され、ユーザの皮膚に接触するための第１の皮膚接触面を持つ、活性電極１を有し、該第１の皮膚接触面は、２ｍｍ以下の最大断面寸法を持つ装置に関する。該装置は、該装置の動作側１５に配置され、ユーザの皮膚に接触するための第２の皮膚接触面を持つ、リターン電極２を有し、該第２の皮膚接触面の面積は、該第１の皮膚接触面の面積よりも少なくとも５倍大きい。活性電極１とリターン電極２との間にＲＦ処置電圧を供給し、それにより該活性電極の下の皮膚領域を加熱するよう構成されたＲＦ生成器２１が配置され、該ＲＦ処置電圧は、１００ｍＨｚ乃至３ＧＨｚの範囲内の周波数を持つ。当該範囲内のＲＦ処置電圧の周波数を用いることにより、ＲＦ処置電圧を印加する結果として活性電極の下に形成される熱的損傷の深さが、かなり低い周波数で同等のＲＦ処置電圧を用いたＲＦ皮膚処置装置に比べて、かなり増大させられる。
