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FIELD EFFECT TRANSISTORS FOR DETECTION OF NOSOCOMIAL INFECTION
专利权人:
Erica M. Phillips
发明人:
Erica M. Phillips,Richard Hantke,Daniel Baird,Mike Rainone,Thomas Edward Plowman,Talbot Presley
申请号:
US11959823
公开号:
US20120143027A1
申请日:
2007.12.19
申请国别(地区):
US
年份:
2012
代理人:
摘要:
Disclosed herein are methods and devices for detection of hospital acquired infections. Disclosed methods may be utilized for continuous in vivo monitoring of a potential infection site and may be utilized to alert patients and/or health care providers to changes in the local environment due to the presence of a pathogen at an early stage of infection. Disclosed methods utilize ion sensitive field effect transistors (ISFETs) to detect changes in ionic concentration at the site due to the presence of a pathogen, for instance at a surgical site. When a pathogen is present, the local ionic concentration, and hence the electrical characteristics of an ISFET may change, causing a detectable signal from the ISFET. An ISFET may be associated with a biological material such as an enzyme or a specific binding partner for an expression product of a pathogen to improve detection. Upon interaction of the expression product with the enzyme or the probe, the electrical characteristics of the ISFET may change, detection of which may then provide information as to the existence a pathogen at the site.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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