Federalnoe gosudarstvennoe byudzhetnoe obrazovatelnoe uchrezhdenie vysshego obrazovaniya "GOSUDARSTVENNYJ MORSKOJ UNIVERSITET IMENI ADMIRALA F.F. USHAKOVA"
发明人:
Timokhin Viktor Mikhajlovich
申请号：
RU20160104693
公开号：
RU2649649(C2)
申请日:
2016.02.11
申请国别(地区):
俄罗斯
年份:
2018
代理人:
摘要：
FIELD: nanotechnologies.SUBSTANCE: invention relates to nanotechnology. Method for obtaining n- and p-types of proton semiconductors comprises determining the type of defects, their quantity and activation energy by measuring thermally stimulated depolarisation currents and specific electric conductivity, which creates an excessive concentration of protons and proton defects when doping crystalline materials with acids of the type HCl, HI, HF (with predominant Hand HOconductivity, i.e. p-type) or alkali of the type NHOH (with predominant OHconductivity, i.e., n-type) and determining the type, concentration and magnitude of the activation energy of relaxers for a wider range of crystalline materials, for which a sample is temperature-controlled at a certain temperature, not exceeding the melting point, the polarised object is cooled without switching off the electric field Eup to T77 K and the polarised state is "frozen". Electric field is then turned off, the sample is closed to the measuring device and the h
