Tekleab Daniel,Rahman Muhammad Maksudur,Stevens Eric Gordon,Banachowicz Bartosz Piotr,Guidash Robert Michael,Korobov Vladimir
申请号：
US201615294191
公开号：
US10002895(B2)
申请日:
2016.10.14
申请国别(地区):
美国
年份:
2018
代理人:
Treyz Law Group, P.C. `Hadd Zachary D.
摘要：
An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.
