A solid-state imaging device includes a first layer, a second layer, a plurality of first microlenses, and a plurality of second microlenses. A first light blocking film of the second layer is arranged in a region corresponding to the plurality of photoelectric conversion elements of the first layer. The plurality of first microlenses are arranged in a region, which corresponds to the plurality of photoelectric conversion elements, on the first principal surface of the first layer. The plurality of second microlenses are arranged in a region which is different from a region corresponding to the first light blocking film in a fourth principal surface of the second layer and which corresponds to a first light transmission layer of the first layer.
