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HIGH-RATE CMP POLISHING METHOD
专利权人:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人:
Nguyen John Vu,Tran Tony Quan,Hendron Jeffrey James,Stack Jeffrey Robert
申请号:
US201715725876
公开号:
US2018361532(A1)
申请日:
2017.10.05
申请国别(地区):
美国
年份:
2018
代理人:
摘要:
The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The radial feeder grooves include a series of biased grooves connecting a pair of adjacent radial feeder grooves. A majority of the biased grooves have either an inward bias toward the center or an outward bias toward the outer edge of the polishing pad. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad at a fixed distance from the center of the polishing pad increases polishing or planarizing removal rate of the wafer.
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