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VETO CELLS GENERATED FROM MEMORY T CELLS
专利权人:
Yeda Research and Development Co. Ltd.
发明人:
Yair REISNER,Noga OR-GEVA,Rotem GIDRON BUDOVSKY,Esther BACHAR-LUSTIG,Assaf LASK,Sivan KAGAN
申请号:
US16313486
公开号:
US20190316087A1
申请日:
2017.06.27
申请国别(地区):
US
年份:
2019
代理人:
摘要:
A method of generating an isolated population of non graft versus host disease (GvHD) inducing cells comprising a central memory T-lymphocyte (Tcm) phenotype, the cells being tolerance inducing cells and/or endowed with anti-disease activity, and capable of homing to the lymph nodes following transplantation is disclosed. The method comprising: (a) providing a population of at least 70% memory T cells; (b) contacting the population of memory T cells with an antigen or antigens so as to allow enrichment of antigen reactive cells; and (c) culturing the cells resulting from step (b) in the presence of cytokines so as to allow proliferation of cells comprising the Tcm phenotype. Cells generated by the method, pharmaceutical compositions and methods of treatment are also disclosed.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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