Ultra low noise instrumentation amplifier

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专利权人:

发明人:

DAS DEVARSHI MRINAL,MARYAM SHOJAEI BAGHINI

申请号：

IN351/MUM/2015

公开号：

IN2015MU00351A

申请日:

2015.02.02

申请国别(地区):

IN

年份:

2016

代理人:

摘要：

An ultra low noise instrumentation amplifier is designed which uses a current reuse technique along with current feedback topology of Instrumentation Amplifiers. Further, the proposed design uses large sized input transistors and biased them in a sub-threshold region to achieve high transconductance-to-current ratio (gm/ID) ratio. This enabled to achieve very low Noise Efficiency Factor (NEF). FIG. 2

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