An Implantable Current Micro-stimulator comprises a current bias circuit, a voltage bias circuit, at least one voltage level converter, a set of PMOS current mirrors, a set of PMOS switches, a first high voltage protection circuit, a set of NMOS current mirrors, a set of NMOS switches and a second high voltage protection circuit. The voltage bias circuit outputs multiple bias voltages. The voltage level converter receives at least one digital control signal and converts voltage level of the digital control signal. Each PMOS current mirroris consisted of transistors, forms a current mode digital to analog converter and output a micro-stimulating current. Each PMOS switch is consisted of transistor switches, receives the level converted digital control signal and determines the micro-stimulating current of the PMOS current mirrors.一種植入式電流微電刺激器包括一電流偏壓電路、一電壓偏壓電路、至少一電壓準位轉換器、一PMOS電流陣列、一PMOS電晶體開關、一第一高電壓保護電路、一NMOS電流陣列、一NMOS電晶體開關及一第二高電壓保護電路。該電壓偏壓電路係產生複數偏壓電壓。該等電壓準位轉換器係接收至少一數位控制訊號,並轉換該等數位控制訊號之電壓準位。該PMOS電流陣列由複數電晶體組成,形成一電流式數位類比轉換器,輸出微電刺激電流。該PMOS電晶體開關由複數開關電晶體組成,接收已轉換電壓準位之數位控制訊號,以改變該PMOS電流陣列之微電刺激電流。(1)...植入式電流微電刺激器(10)...電流偏壓電路(11)...電壓偏壓電路(12)...電壓準位轉換器(13)...PMOS電流陣列(14)...PMOS電晶體開關(15)...第一高電壓保護電路(16)...NMOS電流陣列(17)...NMOS電晶體開關(18)...第二高電壓保護電路
