ДЕКНЕР Джордж Эндел (US),ДОЛАН Лоуренс Эдвард (US)
申请号：
RU2015114845
公开号：
RU2015114845A
申请日:
2013.11.04
申请国别(地区):
RU
年份:
2016
代理人:
摘要：
1. A method for improving the stability of the particles of precipitated silica with metal ions, said method comprising the steps of: a) providing one or more particles of precipitated silicon dioxide b) is subjected to a particle of precipitated silica to a temperature of at least about 800 ° C, for a period of time to form one or more particles treated precipitated silica, wherein the time period is less than 5 minut.2. The method of claim. 1, characterized in that the temperature is from about 850 ° C to about 1050 ° C.3. The method of claim. 1, characterized in that the temperature is from about 900 ° C to about 1000 ° C.4. The method of claim. 1, characterized in that the time period is less than or equal to about 3 minutam.5. A method according to claim. 2, characterized in that the time period is less than or equal to about 2 minutam.6. Treated precipitated, obtained by the method according to claim silicon dioxide. 1.7. A composition for oral care, containing one or more particles treated precipitated silica obtained by the method according to Claim. 1 and metalla.8 ion source. A composition according to claim. 7, characterized in that the metal ion source is a source of tin ions (II) .9. Composition according to claim. 8, characterized in that the source of tin ions (II) is a stannous salt (II), selected from the group consisting of tin chloride (II), stannous gluconate (II), tin acetate (II), tin tartrate (II), tin oxalate (II), tin sulfate (II), stannous citrate (II), stannous malonate (II), tin lactate (II), tin phosphate (II), stannous pyrophosphate (II), tin bromide (II ), tin iodide (II) and their kombinatsiy.10. Composition according to claim. 8, characterized in that the amount of stannous ion (II) is from1. Способ улучшения стабильности частиц осажденной двуокиси кремния с ионами металлов, при этом указанный способ включает стадии, на которых:a) обеспечивают одну или более частиц осажденной двуокиси кремнияb) подвергают частицы осажденной двуокиси
