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NANO-PILLAR TRANSISTOR FABRICATION AND USE
专利权人:
发明人:
Aditya RAJAGOPAL,Axel SCHERER,Michael D. HENRY,Sameer WALAVALKAR,Thomas A. TOMBRELLO,Andrew P. HOMYK
申请号:
US14463392
公开号:
US20140357974A1
申请日:
2014.08.19
申请国别(地区):
US
年份:
2014
代理人:
摘要:
A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar transistor allows for advantageous insertion into cellular membranes, and the biomimitec character of the gate element operates as an advantageous interface for sensing small amplitude voltages such as transmembrane cell potentials. The nano-pillar transistor can be used in various embodiments to stimulate cells, to measure cell response, or to perform a combination of both actions.
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http://www.ckcest.cn/home/
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