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КРИСТАЛЛИЧЕСКАЯ ФОРМА МОНОГИДРАТА ГИДРОХЛОРИДА (R)-7-ХЛОР-N-(ХИНУКЛИДИН-3-ИЛ)БЕНЗО[b]ТИОФЕН-2-КАРБОКСАМИДА
专利权人:
ЭНВИВО ФАРМАСЬЮТИКАЛЗ; ИНК. (US)
发明人:
ОЛИВЕР-ШЭФФЕР Патрисия (US),ШАПИРО Гидеон (US),ЧЕСУОРТ Ричард (US),КИСИДА Мунеки (JP),ИСИГЕ Такаюки (JP)
申请号:
RU2012154288/04
公开号:
RU2012154288A
申请日:
2011.05.17
申请国别(地区):
RU
年份:
2014
代理人:
摘要:
1. Crystalline form I hydrochloride monohydrate (R) -7-chloro-N- (quinuclidin-3-yl) benzo [b] thiophene-2-carboxamide, characterized by an X-ray powder diffractogram for containing peaks expressed as 2Θ at one or both 17.48 and 20.58 ± 0.20 degrees as measured relative to the inner standarta.2 silicon. The crystalline form I according to claim 1, characterized by an X-ray powder diffraction pattern for additionally comprising at least one peak expressed as 2Θ at 4.50, 9.04, 14.60, 15.14, 15.80, 16 60, 18.16, 18.44, 19.48, 21.74, and 25.46 ± 0.20 degrees as measured relative to the inner standarta.3 silicon. The crystalline form I according to claim 2, characterized by an X-ray powder diffraction pattern in further comprising at least two peaks expressed as 2Θ at 4.50, 9.04, 14.60, 15.14, 15.80, 16 60, 18.16, 18.44, 19.48, 21.74 and 25.46 ± 0.20 degrees as measured relative to the inner standarta.4 silicon. The crystalline form I according to claim 2, characterized by an X-ray powder diffraction pattern for additionally comprising at least four peaks expressed as 2Θ at 4.50, 9.04, 14.60, 15.14, 15.80, 16 60, 18.16, 18.44, 19.48, 21.74 and 25.46 ± 0.20 degrees as measured relative to the inner standarta.5 silicon. The crystalline form I according to claim 2, characterized by an X-ray powder diffraction pattern for additionally comprising at least six peaks expressed as 2Θ at 4.50, 9.04, 14.60, 15.14, 15.80, 16 60, 18.16, 18.44, 19.48, 21.74 and 25.46 ± 0.20 degrees as measured relative to the inner standarta.6 silicon. The crystalline form I according to claim 2, characterized by an X-ray powder diffraction pattern for additionally comprising at least eight peaks expressed as 2Θ etc.
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