Ion implantation systems that separate the flow of ions from the flow of neutral particles are disclosed. The separation of neutral particles from ions can be achieved by manipulating the flow of ions in the system through variations in electrical or magnetic fields disposed within the implantation system. The path of neutral particles is less affected by electrical and magnetic fields than ions. The separation of these flows may also be accomplished by diverting the neutral particles from the ion beam, such as via an introduced gas flow or a flow blockage. Both separation techniques can be combined in some embodiments.
