您的位置: 首页 > 农业专利 > 详情页

Mask manufacturing device
专利权人:
Masamitsu Itoh
发明人:
Masamitsu Itoh
申请号:
US13326612
公开号:
US08502171B2
申请日:
2011.12.15
申请国别(地区):
US
年份:
2013
代理人:
摘要:
A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

意 见 箱

匿名:登录

个人用户登录

找回密码

第三方账号登录

忘记密码

个人用户注册

必须为有效邮箱
6~16位数字与字母组合
6~16位数字与字母组合
请输入正确的手机号码

信息补充