Rohm and Haas Electronic Materials CMP Holdings, Inc.;Dow Global Technologies LLC
发明人:
Weis Jonathan G.,Jacob George C.,Kumar Bhawesh,Mastroianni Sarah E.,Xu Wenjun,Chiou Nan-Rong,Islam Mohammad T.
申请号：
US201615264056
公开号：
US10086494(B2)
申请日:
2016.09.13
申请国别(地区):
美国
年份:
2018
代理人:
Merriam Andrew
摘要：
A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
