Jung Ah LIM,SOO JIN KIM,Jeon Kook LEE,Do Kyung Hwang
申请号：
US15429196
公开号：
US20180116592A1
申请日:
2017.02.10
申请国别(地区):
US
年份:
2018
代理人:
摘要：
The present invention relates to a fibrous transistor, and a method of manufacturing the same, and more particularly, to a fibrous transistor, in which a source fiber and a drain fiber are formed in a twisted state in a longitudinal direction, so that a contact surface of the source fiber and the drain fiber is increased, thereby enabling charges to easily move, and a method of manufacturing the same. Further, the present invention relates to a fibrous transistor, in which a gate insulating layer is formed by using ion gel, so that the fibrous transistor may obtain a high current at the same operation voltage, thereby having a low operation voltage, and a method of manufacturing the same.
