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NEW Manganese-Containing Nanostructures
专利权人:
СПАГО ИМЭДЖИНГ АБ (SE)
发明人:
АКСЕЛЬССОН Оскар (SE),ПЕТОРАЛ МЛ. Родриго М. (SE),ЭК Фредрик (SE),ЛАУРИЦСОН Петтер (SE)
申请号:
RU2014111802/04
公开号:
RU2014111802A
申请日:
2012.09.20
申请国别(地区):
RU
年份:
2015
代理人:
摘要:
1. Nanostructure containing manganese ions introduced into a polymer structure containing at least five geminal bisphosphonate groups, where geminal bisphosphonate groups are independently included as where R and R are independently selected from the group consisting of a negative charge, H, alkyl and aryl , and at least one of R and R represents a group bonded to the polymer structure, or forming part of the polymer structure, provided that if one of R and R represents such a bonded group, then the other R and R represent It is either a group capable of binding with the polymer structure, or the residue of such a group, or is selected from the group consisting of H, OH, ORi R, where R is lower alkil.2. The nanostructure according to claim 1, wherein the group associated with the polymer structure and / or the group capable of binding to the polymer structure or the remainder of such a group is selected from the group consisting of (CH) Si (R), where R independently is lower alkyl, OH, O or O-, - is a bond with a polymer structure, and n is 1-5, (CH) COR, where R is O-, NH, NHR, NR or a bond with a polymer structure, R is lower alkyl, n is 1-5 , and - denotes a bond with a polymer structure, and (CH) SOR, where R is O-, NH, NHR, NR or a bond with a polymer structure, Rrep nent is lower alkyl, n is 1-5, and - denotes a bond to a polymeric strukturoy.3. A nanostructure according to claim 1 or 2, which contains silicon atoms. 4. The nanostructure according to claim 1, wherein R and / or R are selected / selected from the group consisting of - (CH) -Si (R), where R is independently lower alkyl, OH, O, or O-, denotes a bond with the polymer structure, and n equal to 1-5.5. Nanostructure according to claim 1, where1. Наноструктура, содержащая ионы марганца, введенные в полимерную структуру, содержащую по меньшей мере пять геминальных бисфосфонатных групп, где геминальные бисфосфонатные группы независимо друг от друга включены как,где Rи Rнезависимо выбраны из группы, сост
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