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Metallic nanomesh
专利权人:
发明人:
Zhifeng Ren,Tianyi Sun,Chuanfei Guo
申请号:
US14298090
公开号:
US09899117B2
申请日:
2014.06.06
申请国别(地区):
US
年份:
2018
代理人:
摘要:
A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300Ω/□ when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.
来源网站:
中国工程科技知识中心
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http://www.ckcest.cn/home/

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