An irradiation side sampling type irradiation pixel detecting device is provided, wherein a scintillator is not easily peeled from a photoelectric conversion panel. In the photoelectric conversion panel, a plurality of thin film transistors are formed on an insulating substrate and covered by first flattened films. A plurality of photodiodes are formed on the first flattened film, and the plurality of photodiodes and first flattened films are covered by second flattened films. The scintillator includes CsI, directly vapor deposited on the photoelectric conversion panel. The forming area of the scintillator is on the second flattened films, located closer to the inside than end portions of the first flattened films and end portions of the second flattened films and located closer to the outside than the thin film transistors and the forming area of the photodiodes.本發明提供一種閃爍體不容易自光電轉換面板剝落的照射側取樣型的放射線畫像檢測裝置。光電轉換面板在絕緣性基板上形成著多個薄膜電晶體,多個薄膜電晶體由第1平坦化膜所覆蓋。在該第1平坦化膜上形成著多個光電二極體,多個光電二極體及第1平坦化膜由第2平坦化膜所覆蓋。閃爍體含有碘化銫,直接蒸鍍於光電轉換面板上。閃爍體的形成區域在第2平坦化膜上,比第1平坦化膜的端部及第2平坦化膜的端部更靠內側處、且比薄膜電晶體及光電二極體的形成區域更靠外側處。11‧‧‧平板檢測器20‧‧‧閃爍體20a‧‧‧柱狀結晶20b‧‧‧非柱狀結晶層20c‧‧‧前端部21‧‧‧光電轉換面板21b‧‧‧外部端子23‧‧‧密封膜24‧‧‧光反射膜30‧‧‧絕緣性基板31‧‧‧畫素32‧‧‧薄膜電晶體(TFT)32a‧‧‧活性層32d‧‧‧汲極電極32g‧‧‧閘極電極32s‧‧‧源極電極33‧‧‧光電二極體(PD)33a‧‧‧下部電極33b‧‧‧半導體層33c‧‧‧上部電極34‧‧‧電荷儲存用電極34a‧‧‧電容器35‧‧‧絕緣膜36‧‧‧TFT保護膜37‧‧‧第1平坦化膜37a‧‧‧端部(第1端部)37b‧‧‧端部(第1端部)37a的端面38、44‧‧‧接觸孔39‧‧‧第2平坦化膜39a‧‧‧端部(第2端部)39b‧‧‧端部(第2端部)39a的端面40‧‧‧接觸孔41‧‧‧偏壓線42‧‧‧保護絕緣膜43‧‧‧端子電極45‧‧‧金屬膜XR‧‧‧X射線
